대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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연속 이온 주입 공정 모델링 및 시뮬레이션

Modeling and Simulation of Multiple Implantation Process

  • 손명식 (중앙대학교 전자공학과 반도체 공정 소자 연구실) ;
  • 박수현황호정 (중앙대학교 전자공학과 반도체 공정 소자 연구실)
  • 발행 : 1998.10.01
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초록

We previously developed and presented the 3D ion implantation simulation code, TRICSI. In this paper, we performed the multiple implants into (100) silicon substrate with our recently enhanced version. Our results for the multiple implants were compared with the previously published SIMS data and obtained the good agreements. In this paper the channeling behaviour of implanted impurity and the damage accumulation are analyzed and discussed in the simple 3D structure, named the Hole structure which has a rectangular implant window.

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