소자열화로 인한 Static 형 입력버퍼의 성능저하

The Performance Degradation of Static Type Input Buffers due to Device Degradation

This paper describes a performance degradation of static type input buffer due to the device degradation in menory devices using $0.8\mu\textrm{m}$ CMOS process. experimental results shows that the degradation of MOS device affects the Trip Point shift in static type input buffer. We have performed the spice simulation and calculated the Trip Point with model parameter and measurement data so that how much the Trip Point(VLT) variate.