대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Atomic Layer Epitaxy 법에 의한 TiN 박막의 성장과 그 특성

Growth and Characteristics of TiN Thin Films by Atomic Layer Epitaxy

  • 이종화 (경북대학교 전자공학과) ;
  • 김동진 (경북대학교 전자공학과 경북대학교 컴퓨터공학과)
  • 발행 : 1998.10.01
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초록

TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

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