대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1998년도 추계종합학술대회 논문집
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- Pages.577-580
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- 1998
PSA-BiCMOS의 고온특성에 관한 연구
High Temperature Characterization of PSA-BiCMOS
초록
This paper presents the characteristics of each MOS device and Bipolar device, then investigates about how these devices take effect on BiCMOS inverter from 300K to 470K. The turn-off and Logic swing characteristics of BiCMOS inverter are degraded by the electrical characteristics of the MOS to around 400K, but over that temperature enhanced by the characteristics of the Bipolar transistor.
키워드