대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

mm파 AlGaAs/InGaAs/GaAs Power PM-HEMT 제작 연구

Fabrication of AlGaAs/InGaAs/GaAs Pseudomorphic HEMT's for mm waves.

  • 이성대 (동국대학교 전자공학과 반도체 및 집적회로 연구실) ;
  • 허종곤이일형이진구 (동국대학교 전자공학과 반도체 및 집적회로 연구실)
  • 발행 : 1998.10.01
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초록

In this study, power AlGaAs/InGaAs/GaAs PM-HEMT's for mm wave's were fabricated using Electron beam lithography and air-bridge techniques, and so on. DC and AC characteristics of the fabricated power PM-HEMTs were measured under the various bias conditions. For example, DC and RF characteristics such as S21 gain of 3.6 dB at 35 ㎓, current gain cut-off frequencies of 45 ㎓ and maximum oscillation frequencies of 100 ㎓ were carefully analyzed for design methodology of sub-mm wave power devices.

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