대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

35 ㎓ MMIC 2단 전력 증폭기 설계

Design of MMIC 2 Stage Power amplifiers for 35 ㎓

  • 이일형 (동국대학교 전자공학과 반도체 및 집적회로 연구실) ;
  • 채연식 (동국대학교 전자공학과 반도체 및 집적회로 연구실)
  • 발행 : 1998.10.01
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초록

A 35 ㎓ GaAs MMIC power amplifier was designed using a monolithic technology with AlGaAs/InGaAs/GaAs power PM-HEMTs, rectangualr spiral inductors and Si3N4 MIM capacitors. The GaAs power MESFETs in the input and output stages have total gate widths of 120 um and 320 um, respectively. Total S21 gain of 10.82dB and S11 of -16.26 dB were obtained from the designed MMIC power amplifier at 35 ㎓. And the chip size of the MMIC amplifier was 1.4$\times$0.8 $\textrm{mm}^2$

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