The study on the temperature characteristics of conductivity for SrTiO$_3$ thin films.

산화 스트롬튬 박막 전도도의 온도특성에 관한 연구

  • Published : 1999.11.01

Abstract

The objective of this study is to deposited the preparation of SrTiO$_3$dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the substrate temperature. The current-voltage characteristics are influenced by the Schottky effict. The resistivity properties of films deposited on silicon substrates were very high resistivity. Conduction mechanisms in the films was dependent on the substrate temperature range.

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