대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

ICP를 이용한 Ar/$Cl_2/BCl_3$ 플라즈마에서 PZT 식각 특성

The etching characteristics of PZT thin films in Ar/$Cl_2/BCl_3$ plasma using ICP

  • 안태현 (중앙대학교 전기공학과) ;
  • 김경태 (광운대학교 전자재료공학과) ;
  • 이영희 (광운대학교 전자재료공학과) ;
  • 서용진 (대불대학교 전기전자공학부) ;
  • 김창일 (중앙대학교 전기공학과) ;
  • 장의구 (중앙대학교 전기공학과)
  • 발행 : 1999.11.20
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초록

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

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