트랩 주입의 구조적 설계에 따른 LIGBT의 전기적 특성 개선에 관한 연구

A Study on the Design of the LIGBT Structure with Trap Injection for Improved Electrical Characteristics

In this paper, the new IGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The simulations are used in order to investigate the effects of the position, width and concentration of trap injection region using 2D device simulator MEDICI. And, their electrical characteristics are analyze and the optimum design parameters are extracted. As a result of simulation, the turn off time for the proposed LIGBT model A by the trap injection is $0.78{\mu}s$. And, the latch up voltage is 3.4V and forward blocking voltage is 168V which are superior to that of conventional structure. In addition, the proposed model is achieved more efficient in switching time and process effort. Therefore, It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.