CMOS 영상 센서를 위한 광 센서의 설계 및 제작

The design and fabrication of photo sensor for CMOS image sensor

  • 신경식 (한국과학기술연구원 정보재료 및 소자 연구센터) ;
  • 주병권 (한국과학기술연구원 정보재료 및 소자 연구센터) ;
  • 이윤희 (한국과학기술연구원 정보재료 및 소자 연구센터) ;
  • 백경갑 (대진대학교 전자공학과) ;
  • 이영석 (청운대학교 전자공학과) ;
  • 박정호 (고려대학교 전자공학과) ;
  • 오명환 (한국과학기술연구원 정보재료 및 소자 연구센터)
  • Shin, K.S. (Electronic Material and Device Research Center, KIST) ;
  • Ju, B.K. (Electronic Material and Device Research Center, KIST) ;
  • Lee, Y.H. (Electronic Material and Device Research Center, KIST) ;
  • Paek, K.K. (Dept. of Electronic Eng., Daejin Univ.) ;
  • Lee, Y.S. (Dept. of Electronic Eng., Chungwoon Univ.) ;
  • Park, J.H. (Dept. of Electronic Eng., Korea Unv.) ;
  • Oh, M.H. (Electronic Material and Device Research Center, KIST)
  • 발행 : 1999.11.20

초록

We designed and fabricated p-type MOSFETs with floating gate in n-type well lesion and examined their photo characteristics. The fabricated MOBFETs showed a high photo-respsonse characteristics, indicating a possibility as a photo sensor. The structures of MOSFETs were changed as to the number of gate and channel. As the number of channel increased, the induced current by light source s increased. However, the effect of the number of gate was negligble on the photo-response characteristics of the device.

키워드