압전 소자용 ZnO 박막의 증착 및 물성 분석

Deposition and characterization of ZnO thin films for piezo-electric devices

  • 이진복 (한양대학교 전기공학과) ;
  • 김귀현 (한양대학교 전기공학과) ;
  • 신양호 (한양대학교 전기공학과) ;
  • 서수형 (한양대학교 전자재료 및 부품연구센터) ;
  • 박진석 (한양대학교 전기공학과)
  • 발행 : 1999.11.20

초록

ZnO thin films are deposited by using an RF magnetron sputtering system. Structural and electrical properties are analyzed as a function of deposition conditions, such as RF power, Ar/($Ar+O_2$) ratio, and substrate temperature. The c-axial growth of ZnO is observed to be preferable to the $SiO_2$/Si substrate, rather than the Si substrate. By adding the oxygen gas during deposition, the electrical resistivity of films is increased, but the c-axial growth is inhibited. A pizoelectric resonator of Al/ZnO/Al is also fabricated to estimate the electric-mechanical coupling coefficient($k^2$) of ZnO film. The value of $k^2$ obtained from our work is about 10.14 %.

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