Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrications and properties of MFIS capacitor using $LiNbO_3$/AIN structure

$LiNbO_3$/AIN 구조를 이용한 MFIS 커패시터의 제작 및 특성

  • 이남열 (청주대학교 일반대학원 전자공학과) ;
  • 정순원 (청주대학교 일반대학원 전자공학과) ;
  • 김용성 (청주대학교 일반대학원 전자공학과) ;
  • 김진규 (청주대학교 일반대학원 전자공학과) ;
  • 정상현 (청주대학교 일반대학원 전자공학과) ;
  • 김광호 (청주대학교 전자·정보통신·반도체공학부) ;
  • 유병곤 (한국전자통신연구원) ;
  • 이원재 (한국전자통신연구원) ;
  • 유인규 (한국전자통신연구원)
  • Published : 2000.07.01
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Abstract

Metal-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/$LiNbO_3$/Si structure were successfully fabricated. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 8.2. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$$1O^{-8}$A/$cm^2$ order at the electric field of 500kV/cm. The dielectric constant of $LiNbO_3$film on AIN/Si structure was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500kV/cm was about 5.6$\times$ $1O^{13}$ $\Omega$.cm.

Keywords