PECVD에 의해 작성된 탄소계 박막의 전계전자방출특성에 대한 RF power 의존성에 관한 연구

RF power dependence on field emission property from carbon thin film grown by PECVD

  • 류정탁 (대구대학교 정보통신공학부) ;
  • 김연보 (대구대학교 정보통신공학부) ;
  • ;
  • ;
  • K. Oura
  • 발행 : 2000.11.01

초록

Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film

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