Fabrication and Characterization of Thin Film Supercapacitor using $WO_3$

$WO_3$를 이용한 박막형 슈퍼캐패시터의 제작 및 특성 평가

In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.