Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of SOI structures whit buried cavities by SDB and elelctrochemical etch-stop

SDB와 전기화학적 식각정지에 의한 매몰 cavity를 갖는 SOI구조의 제작

  • 강경두 (부경대학교 전자공학과) ;
  • 정수태 (부경대학교 전자공학과) ;
  • 류지구 (부경대학교 전자공학과) ;
  • 정재훈 (동서대학교 정보통신공학부) ;
  • 김길중 (동서대학교 정보통신공학부) ;
  • 정귀상 (동서대학교 정보통신공학부)
  • Published : 2000.11.01
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Abstract

This paper described on the fabrication of SOI(Si-on-insulator) structures with buried cavities by SDB technology and eletrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annaling(100$0^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated the SDB SOI structure with buried cavities as well as an accurate control and a good flatness.

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