한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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- Pages.69-70
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- 2000
Electrical Characteristics of Pentacene Thin Film Transistors.
- Kim, Dae-Yop (Department of Electrical and Control Engineering, Hong-Ik University) ;
- Lee, Jae-Hyuk (Department of Electrical and Control Engineering, Hong-Ik University) ;
- Kang, Dou-Youl (Department of Electrical and Control Engineering, Hong-Ik University) ;
- Choi, Jong-Sun (Department of Electrical and Control Engineering, Hong-Ik University) ;
- Kim, Young-Kwan (Department of Applied Science, Hong-Ik University) ;
- Shin, Dong-Myung (Department of Chemical Engineering, Hong-Ik University)
- 발행 : 2000.01.13
초록
There are currently considerable interest in the applications of conjugated polymers, oligomers, and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field-effect transistors and light-emitting diodes. In this study, pentacene thin-film transistors (TFTs) were fabricated on glass substrate. Aluminums were used for gate electrodes. Silicon dioxide was deposited as a gate insulator by PECVD and patterned by reactive ion etching (R.I.E). Gold was used for the electrodes of source and drain. The active semiconductor pentacene layer was thermally evaporated in vacuum at a pressure of about
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