Effect of $TiO_2$ Addition on the Secondary Electron Emission and Discharge Properties of MgO Protective Layer

산화마그네슘 보호막의 이차전자방출과 방전특성에 미치는 산화티타늄첨가의 효과

$Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.