Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth and characterization of ZnS thin films by Hot Wall Method

Hot Wall 법에 의한 ZnS 박막의 제작과 기초적 물성연구

  • Heo, Sung-Gon (Division of ship operating systems engineering, Korea Maritime University) ;
  • Lee, Sang-Tae (Division of ship operating systems engineering, Korea Maritime University)
  • 허성곤 (한국해양대학교 운항시스템공학부) ;
  • 이상태 (한국해양대학교 운항시스템공학부)
  • Published : 2000.05.13
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Abstract

The Zns thin films were deposited on non-alkali glass substrate by the Hot Wall method. The thin films grown at various evaporation cell and substrate temperature were characterized by spectrophotometer and X-ray diffraction to investigate the optical and structural characteristics. The deposition rates were increased with increasing the cell temperature, and were decreased with increasing substrate. The optical characteristics of thin films depends on the deposition rates. The band gap energies measured at room temperature with 3.4~3.5eV are smaller than the theoretical value of 3.54eV. All ZnS thin films are oriented in (111) of the principal direction of a zincblende structure.

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