Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Hump Characteristics of 64M DRAM STI(Shallow Trench Isolated) NMOSFETs Due to Defect

64M DRAM의 Defect 관련 STI(Shallow Trench Isolated) NMOSFET Hump 특성

  • 이형주 (인동대학교 공과대학 전자정보공학부)
  • Published : 2000.05.13
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Abstract

In 64M DRAM, sub-1/4m NMOSFETs with STI(Shallow Trench Isolation), anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN interlayer induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel Boron dopant redistribution due to the defect should be considered to improve hump characteristics besides consideration of STI comer shape and recess.

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