Dual Channel을 가진 Trench Insulated Gate Biploar Transistor(IGBT)특성 연구

Study of Characteristics of Dual Channel Trench IGBT

A Dual Channel Trench IGBT (Insulated Gate Bipolar Transistor) is proposed to improve the latch-up characteristics. Simulation results by MEDICI have shown that the latching current density of proposed device was found to be 2850 A/$cm^2$ while that of conventional device was 1610 A/$cm^2$. The latching current desity of the proposed strucutre was 77.02% higher than that of conventional structre.