Etching Kinetics Of $SrBi_2Ta_2O_{9}$ Thin Film in $Cl_{2}$/$CF_{4}$/Ar gas Chemistry

$Cl_{2}$/$CF_{4}$/Ar gas chemistry에 의한 $SrBi_2Ta_2O_{9}$ 박막의 식각 특성

$SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.