Permeability of CoZrNb film with thickness

CoZrNb막의 두께에 따른 투자율의 변화

  • 허진 (동아대학교 전기전자컴퓨터공학부) ;
  • 김영학 (부경대학교 전기.제어계측공학부) ;
  • 신광호 (경성대학교 정보공학부) ;
  • 사공건 (동아대학교 전기전자컴퓨터공학부)
  • Published : 2001.07.01

Abstract

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.

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