Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Si-wafer direct bonding for high pre-bonding strength

큰 초기접합력을 갖는 Si기판 직접접합에 관한 연구

  • 정연식 (부경대학교 전자공학과) ;
  • 김재민 (동서대학교 정보시스템공학부 메카트로닉스전공) ;
  • 류지구 (부경대학교 전자공학과) ;
  • 정귀상 (동서대학교 정보시스템공학부 메카트로닉스전공)
  • Published : 2001.07.01
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Abstract

Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

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