Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of sputtering PZT thin film on the Ru/$RuO_2$electrode

Ru/$RuO_2$전극에 성장한 PZT박막의 특성에 관한연구

  • 강현일 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 최장현 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 이종덕 (서남대학교 전기전자 및 멀티미디어학부) ;
  • 송준태 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2001.07.01
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Abstract

Ferroelectric lead ziroconate titanate (PZT) thin film were fabricated on the different bottom electrodes. Both Ru and Ru/RuO$_2$bottom electrodes were deposited by RF-magnetron sputteirng method. The structure phase and surface morphology of the PZT thin film were largely affected by the bottom electrode. It was observerd that used of Ru/RuO$_2$double electrode reduced leakage current and better ferroelectric properties compare with RuO$_2$bottom electrode. From these results, Ru/RuO$_2$hybride bottom electrode is thought to be the available structure for the bottom electrode.

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