Analysis of excess minority carrier and charge wish lifetimes in N-dirft region of NPT-IGBT

수명시간에 따른 NPT-IGBT의 N-drift 영역에서의 과잉소수 캐리어와 전하량 분석

In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.