Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Dopping Conditions on a-Se Thin-Films : Microstructural and I-V Study

비정질 박막에 대한 도핑 조건의 영향 및 미세구조와 I-V 연구

  • 박성광 (인제대학교 의용공학과) ;
  • 박지군 (인제대학교 의용공학과) ;
  • 강상식 (인제대학교 의용공학과) ;
  • 공현기 (인제대학교 의용공학과) ;
  • 김진섭 (인제대학교 의료영상연구소) ;
  • 남상희 (인제대학교 의료영상연구소)
  • Published : 2001.11.01
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Abstract

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-Cl 30 ppm and X-ray Sensitivity was 0.57 pc/pixel$.$mR at 137 $\mu\textrm{m}$ x 137 $\mu\textrm{m}$ Pixel area.

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