Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems

전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성

  • 조진욱 (인제대학교 의용공학과) ;
  • 최장용 (인제대학교 의용공학과) ;
  • 박창희 (인제대학교 전산물리학과) ;
  • 김재형 (인제대학교 의료영상연구소) ;
  • 이형원 (인제대학교 의료영상연구소) ;
  • 남상희 (인제대학교 의료영상연구소) ;
  • 서대식 (인제대학교 전기전자공학부)
  • Published : 2001.11.01

Abstract

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

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