Properties of Pressureless Sintered SiC-$TiB_2$ Electroconductive Composites

무가압 소결법에 의한 SiC-$TiB_2$계 도전성 복합체의 특성

  • 박미림 (원광대학교 전기전자 및 정보공학부) ;
  • 주진영 (원광대학교 전기전자 및 정보공학부) ;
  • 신용덕 (원광대학교 전기전자 및 정보공학부) ;
  • 소병문 (익산대학교 전기공학과)
  • Published : 2001.05.11

Abstract

The ${\beta}-SiC+TiB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density is over 78.83% of the theoretical density and increased with increasing sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 140 MPa for composites sintered at $1900^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest of 4.07 GPa at $1900^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 4.07 $MPa{\cdot}m^{1/2}$ for composites at $1900^{\circ}C$. The electrical resistivity was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).

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