Emitting Properties in Poly(3-hexylthiophene) by Heat treatment

열처리한 poly(3-hexylthiophene)의 발광특성

To improve structural properties and induce higher conductivity, we have annealed emitting layer. The temperature condition was investigated by various experiment. To observe the surface morphology of emitting layer, measured the AFM and the X -ray diffraction pattern of P3HT film is shown. It is move to slightly low angles and diffraction peaks also become much sharper. After annealing of emitting layer, EL intensity and Voltage-current-luminance curve is better as compared with untreated. But PL intensity was decreased. It is known that by emission principal. After annealing of emitting layer, EL devices enhances the interface adhesion between the emissive polymer and Indium-tin-oxide electrode, which takes a critical role to improve the emitting properties of EL devices.