Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of PMD(Pre-Metal Dielectric) Linear Nitride Process

PMD(Pre-Metal Dielectric) 선형 질화막 공정의 최적화

  • 정소영 (대불대학교 전기공학과) ;
  • 서용진 (대불대학교 전기공학과) ;
  • 김상용 (아남반도체 FAB 사업부) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 이철인 (안산공과대 전기공학과) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2001.05.11
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Abstract

In this work, we have been studied the characteristics of each nitride film for the optimization of PMD(pre-metal dielectric) liner nitride process, which can applicable in the recent semiconductor manufacturing process. The deposition conditions of nitride film were splited by PO (protect overcoat) nitride, baseline, low hydrogen, high stress and low hydrogen, respectively. And also we tried to catch hold of correlation between BPSG(boro-phospho silicate glass) deposition and densification. Especially, we used FTIR area method for the analysis of density change of Si-H bonding and Si-NH-Si bonding, which decides the characteristics of nitride film. To judge whether the deposited films were safe or not, we investigated the crack generation of wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation.

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