Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07a
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- Pages.36-39
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- 2002
The study of crystallization to Si films deposited using a sputtering method on a Mo substrate
Mo기판 위에 sputtering 법으로 성장된 Si 박막의 결정화 연구
Abstract
Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450