Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
The Korean Institute of Electrical and Electronic Material Engineers
- Annual
2002.07a
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Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.
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Ga
$_2$ O$_3$ nanomaterials were synthesized from mechanically ground GaN powders with thermal annealing Ga$_2$ O$_3$ nanobelts were farmed in a nitrogen atmosphere, while Ga$_2$ O$_3$ nanoparticles were formed inan oxygen atmosphere. The structural properties of the Ga$_2$ O$_3$ nanomaterials were investigated by X-ray diffractometer (XRD) and high-resolution transmission eleotron microscope (HRTEM). The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts are with the range of about 10∼200nm width and 10∼50nm thickness, and that nanoparticles are with the range of about 20∼50nm radius. On the basis of XRD and HRTEM data, we determined that the nanobelts grow toward a direction perpendicular to the (010) lattice plane and that they are enclosed by facets of the (10T) and (101) lattice planes. The formation of the nanobelts may be described by the vapor-solid(VS) mechanism, and the supersaturation device of gaseous phase may play an important role in the formation of Ga$_2$ O$_3$ nanomaterials. -
As the mask design rules get smaller, the probability of the process failure becomes higher due to the narrow overlay margin between the contact and metal interconnect layers. To obtain the minimum process margin, a tabbing and cutting method is applied with the rule based optical proximity correction to the metal layer, so that the protection to bridge problems caused by the insufficient space margin between the metal layers can be accomplished. The side-lobe phenomenon from the attenuated phase shift mask with the tight design nile is analyzed through the aerial image simulation for test patterns with variation of the process parameters such as numerical aperture, transmission rate, and partial coherence. The corrected patterns are finally generated by the rules extracted from the side-lobe simulation.
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In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400
$^{\circ}C$ , working gas ratio Ar:O$_2$ =80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$ . Then we deposited Ba$\sub$ 0.5/Sr$\sub$ 0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$ )/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$ -7/A/$\textrm{cm}^2$ at the range of${\pm}$ 150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate. -
To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35
$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$ , nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed. -
The work focuses on the development of a Cu lead-frame with a single-sided adhesive tape for cost reduction and reliability improvement of LOC (lead on chip) package products, which are widely used for the plastic-encapsulation of memory chips. Most of memory chips are assembled by the LOC packaging process where the top surface of the chip is directly attached to the area of the lead-frame with a double-sided adhesive tape. However, since the lower adhesive layer of the double-sided adhesive tape reveals the disparity in the coefficient of thermal expansion from the silicon chip by more than 20 times, it often causes thermal displacement-induced damage of the IC pattern on the active chip surface during the reliability test. So, in order to solve these problems, in the resent work, the double-sided adhesive tape is replaced by a single-sided adhesive tape. The single-sided adhesive tape does net include the lower adhesive layer but instead, uses adhesive materials, which are filled in clear holes of the base film, just for the attachment of the lead-frame to the top surface of the memory chip. Since thermal expansion of the adhesive materials can be accommodated by the base film, memory product packaged using the lead-flame with the single-sided adhesive tape is shown to have much improved reliability. Author allied this invention to the Korea Patent Office for a patent (4-2000-00097-9).
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Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450
$^{\circ}C$ . However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method -
Electromigration is atomic diffusion driven by a momentum transfer from conducting electrons. With every new generation of intergrated circuits, interconnect line widths have been reduced and current densities in the interconnect have become higher. This leads to an increase in the threat to interconnect reliability due to electromigration. In this paper, we simulated stress evolution with changing temperature, duty factor(ratio of on time and pulse time), frequency under pulsed DC condition. As a result, we predict MTF(median time to failure) and found that exponent n is affected by changing temperature, duty factor.
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Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at 1380
$^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15∼40 nm width and 10-70$\mu\textrm{m}$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along [110] direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures. -
YMnO
$_3$ thin films were spun-coated on the Pt/Ti/SiO$_2$ /Si substrates by sol-gel process using alkoxides, and then dried on hot plates from 300 to 450$^{\circ}C$ . The prepared YMnO$_3$ thin films were annealed at 850$^{\circ}C$ in O$_2$ atmosphere for 1 h. The crystallization of YMnO$_3$ thin films were improved to preferred c-axis orientation and the dielectric characteristics were progressed by increasing the drying temperature. The range of dielectric constant of thin film dried at 450$^{\circ}C$ is 12.9-22.3 and close to that of YMnO$_3$ single crystal. The ferroelecrtic property of YMnO$_3$ thin film was observed on the YMnO$_3$ films. The maximum remnant polarization (2Pr) of YMnO$_3$ thin films dried at 450$^{\circ}C$ was about 2.91${\mu}$ C/cm2. It was suggested that the drying temperature affect to the initial stage of thin film growth of preferred c-axis orientation. -
In this study, a new programming method, to minimize the generation of Si-SiO
$_2$ interface traps of scaled SONOS flash memory as a function of number of program/erase cycles has been proposed. In the proposed programming method, power supply voltage is applied to the gate, forward biased program voltage is applied to the source and the drain, while the substrate is left open, so that the program is achieved by Modified Fowler-Nordheim (MFN) tunneling of electron through the tunnel oxide over source and drain region. For the channel erase, erase voltage is applied to the gate, power supply voltage is applied to the substrate, and the source and drain are open. A single power supply operation of 3 V and a high endurance of 1${\times}$ 10$\^$ 6/ prograss/erase cycles can be realized by the proposed programming method. The asymmetric mode in which the program voltage is higher than the erase voltage, is more efficient than symmetric mode in order to minimize the degradation characteristics of scaled SONOS devices because electrical stress applied to the Si-SiO$_2$ interface is reduced by short programming time. -
SBT thin films were etched at different content of Cl
$_2$ in Cl$_2$ /Ar plasma. We obtained the maximum etch rate of 883${\AA}$ /min at Cl$_2$ (20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$ /Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation. -
The conventional floating zone(FZ) crystal and Czochralski(CZ) silicon crystal have resistivity variations longitudinally as well as radially The resistivity variations of the conventional FZ and CZ crystal are not conformed to requirement of dopant distribution for power devices and thyristors. These resistivity variations in conventional cystals limits the reverse breakdown voltage that could be achieved and forced designers of high power diodes and thyristors to compromise the desired current-voltage characteristics. So to produce high Power diodes and thyristors, Neutron Transmutation Doping(NTD) technique is the one method just because NTD silicon provides very homogeneous distribution of doping concentration. This procedure involves the nuclear transmutation of silicon to phosphorus by bombardment of neutron to the crystal according to the reaction
$^{30}$ Si(n,${\gamma}$ )longrightarrow$^{31}$ Silongrightarrow(2.6 hr)$^{31}$ P+$\beta$ $^{[-10]}$ . The radioactive isotope$^{31}$ Si is formed by$^{31}$ Si capturing a neutron, which then decays into the stable$^{31}$ P isotope (i.e., the donor atom), whose distribution is not dependent on the crystal growth parameters. In this research, neutron was irradiated on FZ silicon wafers which had high resistivity(1000~2000 Ω cm), for 26 and 8.3hours for samples of HTS-1 and HTS-2, and 13, 3.2, 2.0 hours for samples of IP-1, IP-2 and IP-3, respectively, to compare resistivity changes due to time differences. The designed resistivities were approached, which were 2.l Ωcm for HTS-1, 7.21 Ω cm for HTS-2, 1.792cm for IP-1, 6.83 Ωcm for IP-2, 9.23 Ωcm for IP-3, respectively. Point defects were investigated with Deep Level Transient Spectroscopy(DLTS). Four different defects were observed at 80K, 125K, 230K, and above 300K. -
The development of high performance HTS wire is a key factor for various electrical applications of coils and cables. The purpose of this paper is to review and consider the main manufacturing technologies of HTS wire and its current status. A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. According to this, long Bi-2223 wires having Ic of 130 A were recently produced and their mass production has been underway in US. The current status performance of Bi-2223 wire is supposed to be used in power transmission cable because of its lower self-field property. Y-123 second generation conductor is extensively being developed throughout the world and many fabrication processes are competed with each other. 30 m-long Y-123 wire with Ic of 0.8 MA/
$\textrm{cm}^2$ was recently fabricated using IBAD and PLD techniques in Japan. This result offers promise of scalable processing of practical multi-layer coated conductor. -
The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : Cl
$_2$ , respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained r$\sub$ m/ values were smaller than 0.1Ω at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below 0.2 Ω. -
This paper describes on the design structure and development temperature stable strip-line junction isolator operating in above resonance mode. Temperature characteristics of isolator depend on magnet, YIG(Yttium Iron Garnet) ferrite, and conductor etc. These require temperature stability and possible methods of compensation for the temperature dependent effects. In this paper, the analysis and measurement of the temperature characteristics were carried out for the material isolator prototype. The bandwidth of isolator was expended and the center frequency shift was reduced in temperature range of -20∼8O
$^{\circ}C$ . -
High-quality Sr-ferrite sintered magnets have been studied by using mill scale added SrCO
$_3$ and oxidents before oxidation process. The pre-added SrCO$_3$ powders were improved the degree of oxidation and crush of mill scale and the magnetic properties of Sr-ferrite sintered magnets. The small added NaNO$_3$ oxidant was also highly improved the degree of oxidation and crush of mill scale and the magnetic properties of Sr-ferrite sintered magnets; 3805 G of remanent flux density, 3240 Oe of intrinsic coercivity, and 3.45 MGOe of maximum energy product. -
The relationship between electrical properties of superconductor and externally allied magnetic field was studied to develop a magnetic field polarity sensor. The behavior was related to the magnetic flux trapped in the superconductor, which penetrates through the material by the external magnetic field. Electrical characteristics of the superconductor with trapped magnetic flux were extremely sensitive ta the external magnetic field and showed different responses depending on the direction of the magnetic field. Considering the observed properties of the superconductor with trapped magnetic flux, a magnetic sensor was fabricated to detect simultaneously both the intensity and the direction of the magnetic field.
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In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.
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BSCCO (2223) compound which has the highest temperature of transition to the superconducting state in the homologous series considered is synthesized by SHS. The method exploits self-sustaining solid-flame combustion reactions which develop very high internal material temperatures over short periods. This report introduces the SHS method and its advantages and discusses its application in the synthesis of superconducting materials.
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CeO
$_2$ and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition(MOCVD) and the deposition behavior were investigated. The degree of texture of deposited CeO$_2$ and NiO films was strongly dependent on the deposition temperature(T$\sub$ d/) and oxygen partial pressure(P$\sub$ O$_2$ /). ($\ell$ 00) textured films were well deposited at specific deposition temperatures and oxygen partial pressures. The in-plane and out of plane textures estimated form the full width half maximum of the pole figure peaks were less than 10$^{\circ}$ . The surface morphology showed that the CeO$_2$ films consisted of columnar grains grown normal to the Ni substrates, while NiO films were slate and clean like a mirror. The surface roughness of both films estimated by atomic force microscopy(AFM) were as smooth as 3-10 m. The growth rate of the films is much faster than that of other physical deposition methods. -
For fabricating high T
$\sub$ c/ superconducting deposited film, novel electrophoretic deposition technique applied to deposit surface charged Particles on metal substrate with oxy d.c field has been studied. The electric properties of superconducting film don't improve easily because the particles of deposition film are deposited randomly on substrate and don't make orientation affected to its critical current density. In this paper, we studied conventional electrophoresis in addition to a.c field assisted for the improvement of BSCCO superconducting film with high orientation of deposition particles. -
Aging stabilities of the operating frequency of piezoelectric devices such as filter, oscillator and discriminator are very important. In this study it was studied aging stabilities of the length-extensional vibration mode of Pb(Zr
$\_$ y/Ti$\_$ 1-y/)O$_3$ +x[wt%]Cr$_2$ O$_3$ ceramics. PZT ceramics in Morphotropic phase boundary have higher aging rates of k$\_$ 31/ and resonant frequency than those in tetragonal phase or rhombohedral phase. Thermal aging moves the composition with maximum aging rate to Zr-rich side in Cr not added PZT system. Aging rate of resonant frequency of the ceramics with x=0.1, y=0.53 and x=0.3, y=0.53 increased by thermal aging. -
This paper presents the design method and performance characteristics of a chip-type quadrature hybrid using LTCC-MLC technology. The design method for a chip-type quadrature hybrid is based on lumped element equivalent circuit of quarter-wave transformer. The chip-type quadrature hybrid was miniaturized to a greater extent using multilayer structure and lumped element. The proposed design method can also reduce the undesirable parasitic effects of the chip-type quadrature hybrid. The proposed chip-type quadrature hybrid was designed and fabricated using the proposed design method and the equivalent circuit model of a quarter-wave transformer. Fabrication and measurement of designed chip-type quadrature hybrid show much smaller size than a conventional distributed quadrature hybrid and a good agreement with simulated results.
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The calculated and measured dielectric constant of (1-x)(Al
$\sub$ 1/2/Ta$\sub$ 1/2/)O$_2$ -x(Mg$\sub$ 1/3/Ta$\sub$ 2/3/)O$_2$ (O$\leq$ x$\leq$ 1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (Al$\sub$ 1/2/Ta$\sub$ 1/2/)O$_2$ and (Mg$\sub$ 1/3/Ta$\sub$ 2/3/)O$_2$ were orthorhombic and tetragonal trirutile structure, respectively. When (Al$\sub$ 1/2/Ta$\sub$ 1/2/)O$_2$ was substituted by (Mg$\sub$ 1/3/Ta$\sub$ 2/3/)O$_2$ , the phase transformed to tetragonal structure over 60 mole%. Because the ionic radius of (Mg$\sub$ 1/3/Ta$\sub$ 2/3/)O$_2$ was slightly bigger than one of (A1$\sub$ 1/2/Ta$\sub$ 1/2)O$_2$ , the cell parameters increased with an increase of (Mg$\sub$ 1/3/Ta$\sub$ 2/3/)O$_2$ substitution. The measured dielectric constant increased with an increase of (Mg$\sub$ 1/3/Ta$\sub$ 2/3/)O$_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum. -
A proposed multi-layer ceramic (MLC) chip type band-pass filter (BPF) is presented. The MLC chip BPF has the benefits of low cost and small size. The BPF consists of coulped stripline resonators and coupling capacitors. The BPF is designed to have an attenuation pole at below the passband for a receiver band of IMT-2000 handset. The computer-aided design technology is applied for analysis of the BPF frequency characteristics. The passband and attenuation pole depend the coupling between resonators and coupling capacitance. The frequency characterics of the passband and attenuation pole are analysed with the variance of the coupling between resonators and coupling capacitance. An equivalent circuit and structure of MLC chip BPF are proposed. The frequency characteristics of the BPF is well acceptable for IMT-2000 application.
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In this study, development of a new LTCC material using a non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. For LTCC application, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, CaWO
$_4$ was tamed out the suitable LTCC material. CaWO$_4$ can be sintered up to 98% of full density at 1200$^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 10.15, 62880GHz, and -27.8ppm/$^{\circ}C$ , respectively. In order to modify the dielectric properties and densification temperature, 0.5∼1.5 wt% LiF were added to CaWO$_4$ . LiF addition reduced the sintering temperature/time down to 800$^{\circ}C$ /10∼30min due to the reactive liquid phase sintering. Dielectric constant lowered from 10.15 to 9.38 and Q x fo increased up to 92000GHz with increasing LiF content. -
The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[(
$Li_{1/3}Nb_{2/3}$ )$_{1-x}$ $Ti_{x}$ ]$O_{3-{\delta}}$ /(CLNT) was investigated.$Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from$1150^{\circ}C$ to$900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing$Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing$Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$ )$_{1-x}$ $Ti_{x}$ ]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$ )$_{0.8}Ti_{0.2}$ ]$O_{3-{\delta}}$ with 5wt%$Bi_2O_3$ sintered at$900^{\circ}C$ for 3h were$\varepsilon_{r}$ =20, 35 Q.$f_{0}$ =6500, 11,000 GHz,$\tau_{f}$ =4, 13 ppm/$^{\circ}C$ , respectively. -
VCO(Voltage Controlled Oscillator) is one of the main components governing the size, performance and power consumption of telecommunication devices. As the devices become much smaller, VCO need to have much smaller size with better characteristics. Buried type passive components of L,C,R were developed previously and the structure of these components are good for minimizing the size of VCO. Our own library of passive components is used in simulation and fabrication of VCO circuit, and surface mounted components like varactor diode are analysed using the measurement circuit designed by ourselves. Two-Dimensional simulation of VCO circuit and local three-Dimensional structure simulation are performed and their relation is obtained. In structure of multi-layered VCO, some components governing the characteristics of VCO are selected and placed on the top of oscillator for the good tuning process. In resonator part, the stripline structure and low loss glass/ceramic material are used to get higher Q value. In our research, a VCO oscillates in the 2.3∼2.36 GHz band is developed.
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Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O
$_3$ -Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$ . PAN-PZT thick film on Ag-Pd/SiO$_2$ /Si prepared at 900$^{\circ}C$ /1300sec had remanent polarization of 19.70${\mu}$ C/$\textrm{cm}^2$ . -
The characteristics of a multilayer piezoelectric transformer were investigated using 0.05Pb(A
$l_{0.5}$ N$b_{0.5}$ )$O_3$ -0.95Pb(Z$r_{0.52}$ $Ti_{0.48}$ )$O_3$ +0.9wt%N$b_2$ $O_{5}$ +0.5wt%Mn$O_2$ +0.04wt%$V_2$ $O_{5}$ ceramics. The multilayer piezoelectric trans formers were developed for voltage step-up. The multilayer ceramic technology was applied in piezoelectric transformer. The electrical characteristics of the piezoelectric transformer (33x8.5x1mm) has the efficiency of above 85%, step-up ratio of 70 under the 130 kΩ load, and driving frequency of 93.5kHz, respectively.ctively.y.y. -
The electron field emission properties of amorphous carbon (a-C) films deposited using a RF magnetron sputtering system have been improved by introducing a simple method of argon plasma treatment at room temperature. Surface morphologies and structural properties of the a-C films were investigated by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphologies of the a-C films were changed by argon plasma treatment. The emission properties improved with the plasma treatment.
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This paper presents a micro fluxgate magnetic sensor in printed circuit board (PCB). The fluxgate sensor consists of five PCB stack layers including one layer magnetic core and four layers of excitation and pick-up coils. The center layer as a magnetic core is made of a micro patterned amorphous magnetic ribbon with extremely high DC permeability of ∼100,000 and the core has a rectangular-ring shape. The amorphous magnetic core is easily saturated due to the low coercive field and closed magnetic path for the excitation field. Four outer layers as an excitation and pick-up coils have a planar solenoid structure. The chip size of the fabricated sensing element is 7.3
${\times}$ 5.7m㎡. Excellent linear response over the range of -100${\mu}$ T to +100${\mu}$ T is obtained with 540V/T sensitivity at excitation square wave of 3V$\_$ P-P/ and 360kHz. The very low power consumption of ∼8mW was measured. This magnetic sensing element which measures the lower fields than 50${\mu}$ T, is very useful for various applications such as: portable navigation systems, military research, medical research, and space research. -
Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si
$_3$ N$_4$ /SiO$_2$ /Si$_3$ N$_4$ membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced. -
Silica waveguide for an integrated diffractive optical head system was designed and fabricated. The waveguide was designed to optimize the optical efficiency of red and/or blue laser source, and a lab-made RF magnetron sputter was adopted to deposit silica cladding and core layers on SiO
$_2$ /Si substrates. The cladding and core layers were formed using commercial targets, and the former was done with #7740 and the latter with BK7 and BAK4, respectively The surface roughness of the waveguide layers was measured to be 30.3${\AA}$ for BK7 and 17.8${\AA}$ for BAK4, and the difference of refractive indices between core and cladding layers was 0.9% and 2.5%, respectively. The waveguide fabricated with the core layer of BK7 showed better optical properties when the final diffractive optical probe heads were measured with red laser(650nm) source. -
SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/
$\textrm{cm}^2$ ∼Max : 15.5 kgf/$\textrm{cm}^2$ ). -
A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6
$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$ B/=500${\mu}$ A, V$\_$ CE/=2V and V$\_$ SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%. -
This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni
$\_$ 0.8/Fe$\_$ 0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structured solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20um width and 3um thickness is electroplated on Cr(300${\AA}$ )/Au(1500${\AA}$ ) films for the pick-up(42turn) and the excitation(24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3$\mu\textrm{m}$ is obtained under 2000Gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ∼1,100 and coercive field of -0.1Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150V/T at the excitation frequency of 2MHz and the excitation voltage of 4.4Vp-p. The power consumption is estimated to be 50mW. -
Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2
$\mu\textrm{m}$ , and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$ /Si substrates by 0.5 mol solutions in the range from 0.2$\mu\textrm{m}$ to 3.8$\mu\textrm{m}$ . Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3$\mu\textrm{m}$ region, and the orientation of films became random above 3$\mu\textrm{m}$ . Dielectric constants and longitudinal piezoelectric coefficient d$\_$ 33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8$\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$ x/SiO$_2$ /Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25${\mu}$ C/$\textrm{cm}^2$ , respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600$\mu\textrm{m}$ lengths are discussed in this presentation. -
This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability The sensitivity is 1.097∼1.21 mV/V
$.$ kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43 %FS. -
Flexible displays such as plastic based LCDs and organic light-emitting diodes for mobile communication devices have been researched and developed at KETI in KOREA since 1997. The Plastic film substrate has so poor thermal tolerance and non-rigidness that the fabrication of active devices and panel assembly have to perform at low temperature and pressure. In addition, high thermal expansion of the substrate is also a serious problem for reliable metallic film deposition. In this paper, we investigated particularly on the fundamental characteristics of various plastic substrates and then, suggested novel methods that improve the fabrication processes of plastic LCD panel. In order to maintain stable substrate surface and uniform cell gap during panel assembly, we utilized newly-invented iii and vacuum chuck. Electro-optical characteristics of fabricated plastic LCD are better than or equivalent to those of typical glass based LCDs though it is thinner, lighter-weight and more robust.
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The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.
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Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO
$_2$ ) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$ . The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V. -
We have studied the temperature dependence of current-voltage and luminance-voltage characteristics of Organic Light Emitting Diodes(OLEDs). The OLEDS are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinoline) aluminum(III) (Alq
$_3$ ) as an electron transport, and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a buffer layer. The current-voltage and luminance-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs has been interpreted in terms of space-charge-limited current(SCLC) and tunneling mechanism. -
Polycrystalline silicon thin film transistors (poly-Si TFTs) are used in a wide variety of applications, and will figure prominently future high-resolution, high-performance flat panel display technology However, it was very difficult to fabricate high performance poly-Si TFTs at a temperature lower than 300
$^{\circ}C$ for glass substrate. Conventional process on a glass substrate were limited temperature less than 600$^{\circ}C$ This paper proposes a high temperature process above 750$^{\circ}C$ using a flexible molybdenum substrate deposited hydrogenated amorphous silicon (a-Si:H) and than crystallized a rapid thermal processor (RTP) at the various temperatures from 750$^{\circ}C$ to 1050$^{\circ}C$ . The high temperature annealed poly-Si film illustrated field effect mobility higher than 30$\textrm{cm}^2$ /Vs, achieved I$\sub$ on//I$\sub$ off/ current ratio of 10$^4$ and crystall volume fraction of 92%. In this paper, we introduce the new TFTs Process as flexible substrate very promising roll-to-roll process, and exhibit the properties of high temperature crystallized poly-Si Tn on molybdenum substrate. -
With the progress of semiconductor processing technology, avalanohe photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, Planar-type APDs are struggled with a problem of intensed electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focused on studying the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to from p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it can be understood to predict the optimum structure, which can minimize edge breakdown and improve the manufacturability.
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The blue phosphor,
$BaMgAl_{10}O_{17}$ :$Eu^{2+}$ , showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC$O_3$ , A$l_2$ $O_3$ , MgO and E$u_2$ $O_3$ with Al$F_3$ as a flux. The thermal quenching of BaMgAl$O_{17}$ :E$u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of$^{5}$ $D_{0}$ \longrightarro$w^{7}$ $F_1$ and$^{5}$ $D_{0}$ \longrightarro$w^{7}$ $F_2$ transition of$Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$ . The EPR spectrum also reveals that some part of E$u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for$L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E$u^{2+}$ and 6,984eV of$Eu^{3+}$ . The combined X-ray and neutron data suggests that the new phase of EuMgA$l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t. -
The internal quantum efficiency of organic light emitting devices(OLEDs) using fluorescent organic materials is limited within 25% because of the triplet excitons which can hardly emit light. So there has been considerable interest in finding ways to obtain light emission from triplet excitons. One approach has been to add phosphorescent compounds to one of the layers in OLEDs. Then triplet excitons can transfer to these phosphorescent molecules and emit light. In this study, multilayer OLEDs with phosphorescent emitter, Iridium complexes were prepared. The devices with a structure of ITO/TPD/Ir complex doped in the host material/Alq3/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. Using various Ir complexes and the host materials, we fabricated several devices and investigated the device characteristics.
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We have successfully developed the high performance flexible thin film diode device for flexible plastic film LCD. For flexible LCD, TFD device must be normally operated under any deformation state. Two type devices, Ti/Ta
$_2$ O$\sub$ 5//Ta and Al/Ta$_2$ O$\sub$ 5//Al were fabricated and the symmetry and reliability of those were estimated under various measurement conditions including severely bending states. -
The nitrogen oxides, NO and NO2, abbreviated usually as NOx, emitted from combustion facilities such as power plants and automobiles are the typical air-pollutants causing acid rain and photochemical smog. In order to solve the NOx-related pollution problems effectively, we need efficient techniques to monitor NOx in the combustion exhausts and in environments. Development of solid-state electrochemical devices for detecting NOx is demonstrated based on various combination of solid electrolytes and auxiliary sensing materials. The object of this research is to develop various sensor performance for solid state amperometric sensor, and to test gas sensor performance manufactured. So we try to present a guidance for developing amperometric gas sensor.
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The present study discusses the results of the controlled precipitation of HgTe nanocrystals in a PbTe semiconductor matrix and demonstrates its effectiveness in producing well-organized and crystallographically aligned semiconductor nanocrystals. Following the similar procedure used in metallic alloys, the semiconductor alloys are treated at 600
$^{\circ}C$ for 48 hours, quenched and aged up to 500 hours at 300$^{\circ}C$ and 450$^{\circ}C$ to induce homogeneous nucleation and growth of HgTe nanocrystalline precipitates. Examination of the resulting precipitates using transmission electron microscopy (TEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the {100} habit planes making a crystallographic relation of {100}$\sub$ HgTe///{100}$\sub$ PbTe/ and [100]$\sub$ HgTe///[100]$\sub$ PbTe/. It is also found that the nato-disc undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for the preparation of the desirable quantum-dot nanostructures. -
An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of
$CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$ 10$^{11}$ ions/$\textrm{cm}^2$ . At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$ , the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$ , the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered.$CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces.$CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of$CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched. -
The electron-atom collision studies has been essentially use\ulcorner for testing and developing suitable theories of the scattering and collision processes, and for providing a tool for obtaining detailed information on the structure of the target atoms and molecules and final collision products. And, the development of that has also been strongly motivated by the need for electron collision data in such fields as laser physic and development, astrophysics, plasma devices, upper atmospheric processes and radiation physics. Therefore, we explains the concept and the principle of determination of the electron collision cross sections for atoms and molecules by using the present electron swarm method.
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Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.
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In order to evaluate the water ingress to URD power cables with the jacketing materials and the cable structures, water vapor transmission (WVT) tests were carried out by the ASTM and the TEPCO's specification. All polyolefin compounds showed the superior water suppression to conventional PVC. Especially, linear polyethylenes have very low WVT. In case of cable structures, Allaminate cables showed the significant water suppression due to the watertight structure. Accordingly, it can be concluded that jacketing material and cable structure play an important role in the water suppression of URD power cables.
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We measured the electron drift velocity, W, in 0.5%
$SF_{6}$ -Ar mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 8 Torr by the double shutter drift tube with a variable drift distance. This coefficient in the mixture was calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. And the measured and calculated values at different gas number density at each E/N was appreciable dependence in the results on the gas number density, -
In this study, polyurethane acrylate macromer was synthesized and it was used in a gel polymer electrolyte, and then its electrochemical performances were evaluated. LiCoO
$_2$ /GPE/MCF cells were also prepared and their performances depending on discharge currents and temperatures were evaluated. ionic conductivity of the gel polymer electrolyte with PUA at room temperature and -20$^{\circ}C$ was ca. 4.5 x 10$\^$ -3/ S/cm and 1.7${\times}$ 10$\^$ -3/ S/cm, respectively. GPE was stable electrochemically up to 4.5 V vs. Li/Li$\^$ +/. LiCoO$_2$ /GPE/MCF cell showed a good high-rate and a low-temperature performance. -
A stoichiometric mixture of evaporating materials for AgInS
$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680$^{\circ}C$ and 410$^{\circ}C$ , respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$ 10$\^$ 16/ cm$\^$ -3/ and 294$\textrm{cm}^2$ /V$.$ s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$ g/(T) : 2.1365 eV - (9.89${\times}$ 10$\^$ -3/ eV) T$^2$ /(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$ AG/, V$\_$ S/, Ag$\_$ int/, and S$\_$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$ /GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds. -
The stochiometric mixture of evaporating materials for the ZnIn
$_2$ S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$ S$_4$ single crystal thin film, ZnIn$_2$ S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$ , respectively and the growth rate of the ZnIn$_2$ S$_4$ single crystal thin film was about 0.5$\mu\textrm{m}$ /hr. The crystalline structure of ZnIn$_2$ S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$ S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$ 10$\^$ 17/ cm$\^$ -3/, 291$\textrm{cm}^2$ /V$.$ s at 293$^{\circ}$ K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$ S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10$^{\circ}$ K, respectively. From the photoluminescence measurement of ZnIn$_2$ S$_4$ single crystal thin film, we observed free excition (E$\_$ X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$ ,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV. -
The stochiometric mix of evaporating materials for the CuGaTe
$_2$ single crystal thin films was prepared from horizontal furnance. For extrapolation method of X-ray diffraction patterns for the CuGaTe$_2$ polycrystal, it was found tetragonal structure whose lattice constant a$\_$ 0/ and c$\_$ 0/ were 6.025${\AA}$ and 11.931${\AA}$ , respectively. To obtain the single crystal thin films, CuGaTe$_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670$^{\circ}C$ and 410$^{\circ}C$ respective1y, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$ . The crystalline structure of single crystalthin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe$_2$ single crystal thin films deduced from Hall data are 8.72${\times}$ 10$\^$ 23/㎥, 3.42${\times}$ 10$\^$ -2/㎡/V$.$ s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CuGaTe$_2$ single crystal thin film, we have found that the values of spin orbit coupling Δs.o and the crystal field splitting Δcr were 0.0791 eV and 0/2463eV at 10K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0490eV, 0.00558eV, respectively. -
The stochiometric composition of AgGaS
$_2$ polycrystal source materials for the AgGaS$_2$ /GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$ 0/ and c$\sub$ 0/ were 5.756${\AA}$ and 10.305${\AA}$ , respectively. AgGaS$_2$ /GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$ /GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$ /GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\alpha}$ : 8.695${\times}$ 10$\^$ -4/ eV/K, and${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$ /GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV. -
Application of metal silicides such as TiSi
$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$ . The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films. -
In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[
${\mu}$ s]. -
Thin films of Hydrogenated amorphous carbon(a-C:H) are generally exhibited by high electrical resistivities from 10
$^2$ to 10$\^$ 16/ Ω$.$ cm, resulting in an interesting material for high power, high temperature MIS devices applications. The hydrogenated amorphous carbon(a-C:H) films were deposited on silicon and glass using an rf plasma enhanced CVD method. The resultant film properties were evaluated in the respect of material based on r.f. power variation. The hydrogenated amorphous carbon(a-C:H) films of thickness ranging from 30 to 50 m were deposited at the pressure of 1 ton with the mixture of methane and hydrogen. We have used rf-IR( courier transform IR) and AFM(Atomic force microscopy) for determining physical properties and current-voltage(I-V) measurement for electrical Properties. -
We investigated the structural and electrical properties of Ce-doped Ba(
$Zr_{0.2}Ti_{0.8}$ )$O_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/$SiO_2$ /Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/$O_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 m (RMS at$500^{\circ}C$ , Ar:6 scrim,$O_2$ :6 sccm). We have found that annealing procedure after top electrode deposit can reduce the dissipation factor. -
We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi
$\sub$ 4-x/La$\sub$ x/Ti$_3$ O$\sub$ 12/ (BLT) ferroelectric thin film and SiO$_2$ /Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$ -8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$ . Whereas, for the films pre-baked above 500$^{\circ}C$ , the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of${\pm}$ 8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure. -
Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.
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Since the early work of Tersoff and Hamann on the theory of the scanning tunneling microscope (STM), many theoretical approaches have been developed in order to gain further physical insight into the real space image that this technique provides. In this Paper, the STM image of Carbon nanotubes (CNT's) was calculated through the theoretical study. The optimized structure of CNT's was simulated using Brenner's hydrocarbon potential. The structure of simulation is (5. 5) armchair CNT and (10. 0) zigzag CNT. Also we have used that the extended Huckel tight binding (EHTB) theory already provides a fairly good qualitative description of the main processes that control the final contrast in the STM image. we found that the shape of the calculated images is hardly dependent on the exact electronic charge distribution at the surface. The STM images are not too sensitive to the precise electronic structure but, rather, they reflect its qualitative features. As a result of the simulation, The STM images of CNT's and the electronic density distribution were investigated. It found that the EHTB theory is appropriate for STM image calculation and that the STM images are in agreement with the result of Experiment.
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This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200
$\mu\textrm{m}$ , front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$ , BSF thickness 5$\mu\textrm{m}$ , doping concentration 5${\times}$ 10$\^$ 19/ cm$\^$ -3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %. -
In this study, noise figures of 0.3
$\mu\textrm{m}$ -GaAs MESFETs are predicted experimentally with different temperatures. Both the noise figure and the gate leakage current are obtained with wide range of temperatures(27$^{\circ}C$ ∼300$^{\circ}C$ ). From the results, gate leakage current increases with temperatures. It is expected that gate leakage current contributes directly to the increase of shot noise current. It is therefore highly recommended to apply an accurate noise analysis to the design of the devices and modules at high temperatures. Fini,Uy the relation between the gate currents resulting in the increase of noise and the noise figures of submicron GaAs MESFETs are traced with different temperatures -
In this paper, we investigated a feasibility of cerium oxide(CeO
$_2$ ) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$ /Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$ 10$\^$ 11/ cm$\^$ -1/eV$\^$ -1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order. -
The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48
$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra. -
The Quantum Hall Resistance(QHR) device which consists of GaAs/AlGaAs heterojunction structure is used for the realization of QHR Standard based on QHE. In order to characterize electrical contact resistances and dissipations of the device, it is slowly cooled down for eliminating thermal shock and unwanted noise. Then, the two properties are measured under 1.5 K and 5.15 T. Contact resistances are all within 1.2 Ω and longitudinal resistivities are all within 1 mΩ up to DC 90
${\mu}$ A. The results mean the device is operated well to realize the QHR Standard. To confirm it, the QHR Standard having the device is compared using a direct current comparator bridge with a 1 Ω resistance standard which the calibrated value is known from QHR standards maintained by other countries. The difference between them is agreed well within measurement uncertainty. It is thus considered that the properties of the device is estimated well and has good performance. -
A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19
$\mu\textrm{m}$ . The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V, -
A new lateral trench electrode IGBT with p+ diverter was Proposed to suppress latch-up of LTIGBT. The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEIGBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/
$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occurred at an anode current density of 540A/$\textrm{cm}^2$ . And the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. That of the conventional LTIGBT of the same size was no more than 105V. When the gate voltage is applied 12V, the forward conduction currents of the Proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90mA and 70mA, respectively, at the same breakdown voltage of 150V. -
High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600
$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM). -
High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10
$\^$ 15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer. -
Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150
$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process. -
Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950
$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current -
Hf thin films were deposited on bottom metal using a RF magnetron sputtering method followed by oxidation and annealing in O
$_2$ and N$_2$ ambient, respectively. Various top metal electrodes (i.e., Al, Au, and Cu) were deposited by evaporation, and their roles on physical and electrical properties were investigated. Using the XRD, SEM and AFM techniques, we confirmed that the grain size of HfO$_2$ thin films enlarges as a function of oxidation temperature, increasing dielectric constant. However, other electrical properties (e.g., tan) deteriorateas a consequence. The dielectric constant and tan of HfO$_2$ thin films oxidized at 500$^{\circ}C$ were 17-25 and 3${\times}$ 10-3 - 2x10-2, respectively, in the frequency range of 1 Hz to 1 MHz. The leakage current density was less than 1${\times}$ 10-8A/cm2 up to 0.7 MV/cm. In addition, electrical properties of HfO$_2$ thin films (e.g., the dielectric constant, leakage current and tan$\delta$ ) depend on top metal electrode. We showed that Al top metal electrode results in the best result. -
GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,
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Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/
$SiO_2$ /Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x$10^{9}$ bipolar switching cycling. -
We investigated the reduction of etching damage by additive O
$_2$ in etching gas and recovery of etching damage by O$_2$ annealing. The PZT thin films were etched using additive Ar or O$_2$ into Cl$_2$ /CF$_4$ gas mixing ratio of 8/2. In order to recover ferroelectric properties of PZT thin films after etching, the etched PZT thin films were annealed at 600 C in O$_2$ atmosphere for 10 min. The remanent polarization is decreased seriously and fatigue is accelerated in the PZT sample etched in Ar/(C1$_2$ +CF$_4$ ) plasma, whereas these characteristics are improved in O$_2$ /(Cl$_2$ /CF$_4$ ). From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Pb-O, Zr-O and Ti-O peaks are changed and the etch byproducts such as metal chloride and metal fluoride are reduced by O$_2$ annealing. From electron probe micro analyzer (EPMA) and auger electron spectroscopy(AES), O$_2$ vacancy is observed after etching. In x-ray diffraction (XRD), the structure damage in the additive O$_2$ into C1$_2$ /CF$_4$ is reduced and the improvement of ferroelectric behavioral annealed sample is consistent with the increase of the (100) and (200) PZT peaks. -
GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.
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Polycrystalline Cu(In,Ga)Se
$_2$ (CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films -
This paper presents deposition and characterizations of microcrystalline silicon(
${\mu}$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$ . The SiH$_4$ concentration[F(SiH$_4$ )/F(SiH$_4$ ).+(H$_2$ )] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic${\mu}$ c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type${\mu}$ c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$ H$\_$ 6/ to SiH$_4$ gas. The solar cells with structure of Al/nip${\mu}$ c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research. -
Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures (
$\leq$ 30$0^{\circ}C$ ), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells. -
Dielectric thin films of Pb
$\_$ 0.72/La$\_$ 0.28/Ti$\_$ 0.93/O$_3$ (PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$ /Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size. -
When the current flows over the allowable current due to the overload, it causes electric disaster such as an electrical fire and an electric shock by short current or leakage of electricity because the covering is deteriorated according to the heating action. In this paper, for the wire(IV 1.6mm) used as interior wiring, we analyzed a variation of the surroundings temperature, the form and the structure of a covering, and the crystal structure of a conductor. In the result of this experiment, the surroundings temperature at the allowable current of 300% rose to about 47
$^{\circ}C$ , and it rose up to the maximum allowable temperature of the wire at 400%. Consequently, it was broken within one minute at 500%. In the analysis of a metallograph, the conductor broken by the over current showed the dendrite. These analyses result will be applied to judging the electrical fire. -
This paper presented the characteristic of Heat-transfer on the winding composed with Epoxy-resin in a 50 kVA cast-resin dry type transformer The resin cast transformer is used widely in supplying electricity systems. However, to know the thermal characteristics of that is very useful in designing, manufacturing, and maintaining, there is no pertinent method to calculate this. In this paper, Based on the results of the physical characteristics and the simulation by commercial software using FEM method, we established the Prototype Model for this. According to that Model, an analysis on a variation of the hottest spot temperature was discussed as a function of thermal conductivity for the individual windings composed with Epoxy-resin. The thermal conductivity of the individual windings with reference to upper way was discussed.
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The primary insulation system used in an oil-filled transformer is Kraft paper, wood, porcelain and, of course, oil. Modern transformers use paper that is chemically treated to improve its tensile strength properties and resistance to aging caused by immersion in oil. These insulation papers are mainly aged to thermal stress. Over the course of the insulation paper and oil's life it is exposed to high temperatures, oxygen and water. Its interaction with the steel of the tank and core plus the copper and aluminium of the windings will eventually cause the chemical properties of the oil to decay. High temperature have an effect on mechanical strength of cellulous paper using the layer insulation. We made two aging cell in which thermal aging tests of insulation papers and mineral oil are conducted. It is measured dielectric strength, number of acid, moisture, etc. of insulation paper and oil aged in the aging cells.
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In this paper, the performance of high-k dielectric is modeled by observing electrical characteristics through the process and device simulation. ZrO
$_2$ on Si substrate is used as test structures to characterize the current-voltage and the capacitance-voltage profiles. In order to verify the simulation results, the experimental results are used as a reference. Based on the modeling results, the methodology can be a potential tool to predict the characteristics of the ZrO$_2$ dielectric. -
The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of (idled specimens with treating silane, the breakdown strength become much higher Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5 MV/cm.
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In this paper the characteristics of surface flashover for high temperature superconducting transformer(HTS) was discussed. The transformer, will be developed in the shell type with double pancake coil, isn't developed yet in the world. We conducted experiment of surface flashover that could occur in the windings of the transformer. First, we distinguished the surface flashover with electrode alignment into two type, such as parallel and vertical, and then compared with each characteristics of surface flashover. And the surface flashover with metallic particle was tested, it was also affected by the particle position. .
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The surface and volume resistivity in the polymers, PE(polyethylene) and PP(polypropylene) mixtures are tested and measured by the ASTM D257(KS M3015) standard. Humidity effects on surface and volume resistivity in two polymers have been studied qualitatively at room temperature. The results of resistivity in these polymers show that the values of surface resistivity (and volume resistivity) at the humidity of 90% are remarkably small compared with those at the humidity of 50%, independing on applied voltage. When we varied the humidity in two polymers, it was found to takes many hours to recover into original surface resistivity (and volume resistivity) of these polymers.
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This paper presents on contamination performance of polymeric outdoor insulator with different contaminant accumulation. The ESDD (equivalent salt deposit density), tracking resistance and clean-fog test were performed to investigate the characteristics of contamination performance on polymeric outdoor insulator. Furthermore, we evaluated together with the porcelain samples for its comparison. It is found that ESDD of polymeric and porcelain insulator depends on the installation position. This surface accumulation of contaminant lead to the loss of surface hydrophobicity, expecially upper shed part of polymeric insulator. In addition, the effect of an artificial contaminant on the tracking resistance by inclined-plane method and leakage suppression ability under clean fog was surveyed. The time of tracking failure did not appear to change significantly with a much contaminant accumulation, while leakage current under clean-fog increased.
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This paper reports on the evaluation of weathering resistance, tracking test and salt-fog of various kinds of cycloaliphatic epoxy systems. It was found that UV irradiation induced the loss of hydrophobic level due to the chain scission attack at the surface. It could be seen that samples containing an UV absorbent/antioxidant and a silicone oil additive knave a good performance in weathering ageing, whereas ATH filled ones have high resistance against tracking failure than others. Under salt-fog test, specimens mixed with silicone oil could suppress leakage current development. It was thought that silicone oil mixed into cycloaliphatic epoxy system could lead to lower the surface energy and to retain hydrophobic properties for a long time, which are desirable for outdoor performances.
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In this paper, the effect of surface tension, wettability, flow rate of contaminants with varying surfactant content and frequency of applied voltage on the tracking breakdown of epoxy insulating materials were investigated. As the flow rate of contaminant is increased, the surface resistivity is decreased, and the leakage current is increased, the time to tracking breakdown is decreased. It is found that time to tracking breakdown depends on the surface tension of contaminant, that is difference of wettability And as the frequency of applied voltage is increased, time to tracking breakdown decreased.
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The interface between two different materials in the insulation systems is the weak-link in the underground power transmission systems, In this paper, Optimum conditions of the interface between Epoxy and EPDM is studied. The variation factor condition of interface is roughness of surface, spreading of oils, interfacial pressure and temperature. The breakdown times under the constant voltage below the breakdown voltage were also gained. The breakdown voltage at the after laying time equivalent to is calculated by the V-t characteristic and the inverse power law. When this is done, the characteristic life exponent n is used and the long time breakdown voltage can be evaluated.
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A Estimation of Contamination Degree by the Measurement of Phase Difference on the Outdoor InsulatorIn this paper, a phase difference of liveline insulator was measured and analyzed to estimate the contamination degree. The probability of accident rises according to the increase of the contamination. So the estimation of contamination degree is very important in design and maintenance of outdoor insulator. There are many methods to measure the contamination degree, but those methods use the spacial sense to measure the contamination degree. So, we have no information about the contamination from the liveline insulator, but there is a measurement of phase difference to estimate the contamination degree. The phase difference is varied with the increase of ESDD, so the contamination degree could be estimated by using those characteristics. The experiment is performed to analyze the interrelationship between contamination degree and phase difference. The variable condition is relative humidity that increases from 30 to 100 % in a chamber. We use the DAS program to measure and analyze the data. From the result, the variation of phase difference is different by the contamination degree, so we can confirm the possibility of estimating the contamination degree by the phase difference.
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Tracking Resistance and UV Degradation Property of Polymeric Insulating Materials by Cross-Link TimeRecently polymeric insulators and arresters are being used for outdoor high voltage applications. Polymeric insulators for transmission line have significant advantages over porcelain and glass insulators, especially for ultra-high voltage(UHV) transmission lines. Their advantages are light weight, vandalism resistance and hydrophobicity. Polymeric insulator kind are a relatively new technology, but their expected life is still unknown. In this paper, the material property for polymeric insulating material such as silicone rubber and EPBM is investigated by cross-link time and the relation between tracking resistance and W resistance is analyzed by IEC 60587 and W aging experiment.
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A silicone rubber has been used so many dielectric materials for extremely high voltage(EBW) electric appliances. The reason why it is very stable in the thermal, mechanical and electrical environment. In this paper, we have studied the dependence of dielectric characteristics of silicone rubber on frequency-dependent variation. The dielectric characteristics were measured in the temperature range of 25[
$^{\circ}C$ ] and 150[$^{\circ}C$ ]. Also we measured in the voltage range of 1[V] and 20[V]. The energy of activation on the dielectric loss obtained 2.44[kcal/mol], 2.1[kcal/mol], 1.63[kcal/mol] and 1.57[kcal/mol] by appling respectively. -
In this paper, the physical and volume resistivity properties of cross-linked polyethylene (XLPE) for ultra-high voltage investigated due to temperature dependence, and the measurement of volume resistivity used to highmegohm meter is measured from 1 to 30 minutes when the each applied voltage, for example, DC 100[V], 250[V], 500[V] and 1000[V] is applied, according to the step voltage application method. From FT-IR spectrum as an analysis of physical properties, a strong absorption in wavenumbers 700 to 730[
$cm^{-1}$ /], 1456[$cm^{-1}$ /] and 2700 to 3000 [$cm^{-1}$ /] observed by the methyl groups(CH$_2$ ). From the analysis of DSC, the crystalline melting points of the specimen observed in the temperature 60[$^{\circ}C$ ] and 106.58[$^{\circ}C$ ]. -
The conventional thermal insulator and power transformer testing is widely used in surface aging measurement of outside insulator because those testing can carry out very short time in Lab testing. Also thermal testing is able to offer the standard judgement of relative degradation level of outside HV machine. There it is very useful method compare to previous conventional thermal testing method and effective Lab testing method. But surface discharges(SD) have very complex characteristics of discharge pattern so it is required estimation research to development of precise analysis method. In recent, the study of IRR-camera is carrying out discover of temperature of power equipment through condition diagnosis and system development of degradation diagnosis. In this study, thermal testing of Power transformer is measured with partial temperature distribution in real time.
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In order to increase perpendicular magnetic anisotropy of magnetic layer and prepare magnetic recording layer with a good quality by epitaxial growth between magnetic layer and, we prepared Co
$\_$ 77/Cr$\_$ 20/Ta$_3$ /Si doublelayer for perpendicular magnetic recording media which was promoted as next generation recording media on slide glass substrate. The thickness of magnetic layer and Underlayer were varied from 20 to 100 nm and 5 to 100 m, respectively. The surface morphology and crystal structure of the CoCrTa/Si film were examined with XRD and AFM. Prepared thin films showed improvement of dispersion angle of c-axis orientation Δ$\theta$ $\_$ 50/ caused by inserting amorphous Si underlayer. -
In the sintering of YIG, abnormal grain growth phenomena was observed. This abnormal grain growth is related to the sintering temperature in this experiment. In the sintering below 145
$0^{\circ}C$ ., the sintered body showed narrow size distribution. However, in the sintering at 145$0^{\circ}C$ , a few grains grew rapidly with respect to other grains, and bimodal size distribution was appeared. Liquid phase was not observed far from the abnormally grown large grains, but only near the large grains. This means that the abnormal grain growth was caused by the nonuniform distribution of liquid phase which promote the grains growth. This nonuniform distribution of liquid phase was thought to be due to the nonuniform mixing of the starting materials. This abnormal grain growth was suppressed by enhance the compositional uniformity by multiple calcination. -
In order to get proper original suspension for the electrophoresis process of making YBaCuO films, YBaCuO superconductor powder was prepared with the Sol-gel method. The composition of the powder was analyzed by X-ray diffraction, which was identified as YBa
$_2$ Cu$_3$ O$\sub$ 7-x/(Yl23) phase. The form of YBaCuO single particle was showed to be spherical by scanning electronic microscope and its size was among 0.2-1$\mu\textrm{m}$ . The critical transition temperature (T$\sub$ c/) and the critical current density (J$\sub$ c/) were measured with the four-probe, method. The T$\sub$ c/ was about 91 K, and the J$\sub$ c/ was 5-30 A/$\textrm{cm}^2$ . -
We performed a continuous heat treatment experiment for long Si
$_2$ Sr$_2$ CaCuO$_{x}$ (Bi2212) superconductor tapes on copper substrates. A precursor that contains a mixture of Bi$_2$ O$_3$ , SrCO$_3$ , and CaCO$_3$ powders was prepared and screen-printed on Cu tapes. The screen- printed tapes were thermally treated by consecutive processes with various temperature settings using an air-filled tube furnace. The diffraction patterns and the microstructures of the high temperature superconductor thick films were analyzed by X-ray diffractometry (XRD) and optical Microscopy respectively, and the critical temperatures of the superconducting thick films were measured. The critical temperatures of the superconducting films were measured to be about 77K, and the films'crystallographic c-axes were confirmed to be normal to the film surfaces by XRD and morphology observation. We also observed that the thick superconducting layer is formed and aligned on the copper substrate via partial melted state that consists of a liquid phase and a secondary phase.e. -
We carried out the experiments for fabricating
$Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{x}$ (Bi2223) superconductor thick films on Cu tapes. Cu-free (Bi,Pb)-Sr-Ca-0 powder mixtures were screen- printed on Cu tapes and heat-treated at 840-$860^{\circ}C$ for several minutes in air. Surface microstructures and phases of films were analyzed by XRD and optical microscope. The electric properties of superconducting films were examined by the four probe method. At heat-treatment temperature, the printing layers were in a partially molten state by liquid reaction between CuO in the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure, it is thought that Bi2223 superconducting particles nucleate at interfaces between Bi2212 phase and liquid. -
We synthesize a (Y,Sm)BCO(its composition is (Y/Sm123+0.4Y/Sm211)+1wt%CeO
$_2$ ) powders using polymeric complex method. (Y,Sm)BCO powders are prepared as heated at 970$^{\circ}C$ . For measurement of this characterization, We measure XRD and SEM. We use TSMG method for fabricatlon of (Y,Sm)BCO single crystal. The manufactured VBCO single crystal is measured by a magnetic distribution device using 0.5 Tesla magnet. As the result of this measurement, we find that a trapped magnet fields are 550 Gauss. -
Temperature(T) dependence of the sheet resistance(
$R_{ ) has been investigated on the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The$\square$ }$$R_{ -T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition took place, with the resistance on the normal state, RN, reaching 4.l㏀ at 80 K. This$\square$ }$$R_{N}$ value is close to the universal quantum number, h/(2e)$^2$ ≡6.5㏀ predicted by the Kosterlitz-Thouless(KT) transition theory. The$R_{ -T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.e.$\square$ }$ -
Phase intergrowth some kinds of the Bi
$_2$ Sr$_2$ Ca$\_$ n-1/Cu$\_$ n/O$\_$ y/ phases is observed in the thin film fabrication at ultralow co-deposition with multi targets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis. -
HTS transformer experimentally. High temperature superconductors can only be applied against an engineering specification that has to be determined for each particular application form the design requirements for economic viability and for operation margins in service. High temperature superconducting(HTS) power apparatus are very promising candidates for application. Especially, these advantages make superconducting transformers very promising candidates for application in electrical power engineering and locomotives. In order to realize the HTS transformer, it is necessary to establish the high voltage insulation technique in cryogenic temperature. So far, insulation research of Pancake type HTS transformer is lacking nothing but insulation research of . solenoid type transformer consisted. Therefore, the composite insulation of double pancake coil type transformer are described and ac breakdown voltage characteristics of liquid nitrogen(LN
$_2$ ) under HTS pancake coil electrode made by Bi-2223/Ag are studied. Breakdown in LN$_2$ is dominated electrode shape and distance. The relation between surface flashover voltage is considered for FRP. This research presented basis information of electrical insulation design for double pancake coil type HTS transformer. -
We synthesized Y
$\sub$ 1.8/Ba$\sub$ 2.4/Cu$\sub$ 3.4/O$\sub$ x/(Y123+Y211+1wt% CeO$_2$ ) powders using Polymeric Complex method and used raw materials; Y$_2$ O$_3$ , BaCO$_3$ , CuO and CeO$_2$ . It was formed by calcination at 850$^{\circ}C$ for 24h in air. In comparison of solid-state method, sol-gel method etc., synthesis temperature decreased up to 100$^{\circ}C$ . -
BSCCO 2212 HTS was fabricated by CFP(centrifugal forming process). The powder was initially ground in the mixing ratio of 2:2::1:2 with 10% of SrSO
$_4$ . The temperature increased up to 1035$^{\circ}C$ and 1200$^{\circ}C$ for melting. The melt was poured into the preheated and rotating copper mould from 200 to 600$^{\circ}C$ . The specimen was not broken by thermal impact when the melting temperature was over 1050$^{\circ}C$ and copper mould was preheated over 400$^{\circ}C$ for 30min. A tube type of specimen was annealed at 840$^{\circ}C$ or 860$^{\circ}C$ in oxygen atmosphere for 24hours. Typical microstructure was analyzed in terms of CFP parameters by XRD, SEM, and EDS and also superconducting characteristics were compared. -
In economical points of view, AC loss of high temperature superconducting devices is considered as a serious problem that must be solved. Expecially, in case of HTS cables, HTS tapes are wound helically on the former to reduce AC loss. Critical characteristics of HTS tapes, however, are influenced by mechanical stress as well as electrical, temperature, and magnetical factors. The purpose of this study is to investigate the over current characteristics of HTS tapes given mechanical stress when they are wound on the former. We prepared HTS tapes with the pitch angle 20
$^{\circ}$ , length 25cm as well as tapes with pitch angle 0$^{\circ}$ . When current of over 200A$\_$ rms/ was applied, we found out that there are differences to the rate of resistance increase between the case of pitch angle 20$^{\circ}$ and that of 0$^{\circ}$ . The rate of resistance variation in HTS tapes of pitch angle 20$^{\circ}$ increased more slowly than that of pitch angle 0$^{\circ}$ . As a result, we concluded that if critical characteristics of HTS tapes are degraded by any external factor, when over current is applied, the current limiting characteristics in HTS tapes won't be able to be expected any more. -
In this paper, we compared the characteristic of fault current liminting in the magnetic shielding type High-Tc superconducting fault current limiter(FCL) using both Piecewise linear magnetization curve and real magnetization one of iron core. From this paper, the characteristics of fault current limiting in both cases showed many differences. The latter has higher fault current than the former, because the saturation of iron core was reflected and more accumulated during fault. It is expected that the more exact characteristic of magnetic shielding type High-Tc superconducting FCL was obtained in the case of design and modeling.
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In this study, the ellipsoidal cap type magnetic pole structure was proposed for the electro-magnet in B-H curve tracer. From the simulation for the electro-magnet without specimen, the area of effective uniform field(99% range for the central field value) was considerably increased in case of the newly proposed ellipsoidal cap type magnetic pole than that of the conventional simple-inclined cap type magnetic pole. Also, through the simulation for the electro-magnet with permanent magnet specimen(NaFe30), the optimal Positions of the magnetic field measurement sensor(Hall sensor) were found out in each case and the errors were decreased in case of the newly proposed ellipsoidal cap type magnetic pole.
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Ag (silver) can be used for YBa
$_2$ Cu$_3$ O$\_$ 7-$\delta$ /(YBCO) coated conductor tape as the substrate on which YBCO can be deposited directly because of the chemical compatibility of Ag with YBCO. We have fabricated rolled Ag tapes with various total reduction ratios and different thicknesses. As-rolled Ag tape was recrystallized at 750$^{\circ}C$ for 30min in air and vacuum of 10$\^$ -3/ torr. The orientation distribution functions (ODF) calculated from three x-ray pole figures of as-rolled and recrystallized tapes were analysed. As the total reduction ratio increased from 94 to 98%, the development of {110}texture of as-rolled Ag improved. Under the present experimental condition, maximum {110} ODF value of Ag tape was obtained for the sample with 94% total reduction ratio which was recrystallized at 750 $^{\circ}C$ for 30min in vacuum of 10$\^$ -3/ torr. -
We designed wideband HTS antennas which consists of two triangle-radiation patches using a YBa
$_2$ Cu$_3$ O$\sub$ 7-x/ (YBCO) superconducting thin film. The major limitation of high-Tc superconducting (HTS) microstrip antennas is the narrow bandwidth due to the high Q and thin substrate. Defining bandwidth as the frequency range over which standing wave ratio (SWR) 2:1 or less, HTS antenna bandwidths are typically 0.85% to 1.1%. Thus considerable effort has been focused on developing antennas for broadband operation. To calculate input impedance and design of the broadband HTS antennas a moment method technique was used. The HTS antenna fabricated in this work was designed for K-band, which is useful band for satellite-to-satellite communications. The bandwidth obtained was a significant 6.7% and the other measured performance of our HTS antenna, including the bandwidth, radiation Pattern, efficiency, standing wave ratio (SWR) and return losses was reported. -
A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.
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NiO buffer layers for YBCO coated conductors were deposited on hi-axially textured Ni substrates by MOCVD(metal organic chemical vapor deposition) method, using single solution source. To establish the processing condition, oxygen partial pressure and deposition temperature were changed. The surface orientation and degree of texture were estimated by X-ray diffraction, X-ray pole figure and atomic force microscopy. The FWHMs of in-plane and out-of-plane of the NiO films were about 10
$^{\circ}$ . The surface roughness was a function of deposition temperature. The AFM surface roughness of NiO films is in the range of 3∼10 nm, when NiO films was grown at 450∼530$^{\circ}C$ . -
Cube-textured Ni substrates for YBCO coated conductors were fabricated by cold-rolling and annealing of Ni powder compacts. To establish the optimum sintering temperature, tensile test was performed for the Ni rod sintered at various temperatures. The Ni rods prepared at above 100
$0^{\circ}C$ showed good mechanical properties due to the complete densification of the Ni rods. The Ni rods were rolled to final thickness of 100${\mu}{\textrm}{m}$ and then annealed at 100$0^{\circ}C$ for various annealing time for texture development. The texture analysis made by 2$\theta$ scan and pole-figure showed that the cube texture was developed in a short time of a few munitues. The FWHM of in-plane and out of plane texture of the prepared Ni tapes was 8-10$^{\circ}$ . The AEM surface roughness of the Ni tapes was as smooth as 3 nm.