Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07a
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- Pages.164-167
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- 2002
A Study on Direct Bonding of 3C-SiC Wafers Using PECVD Oxide
CVD 절연막을 이용한 3C-SiC기판의 직접접합에 관한 연구
Abstract
SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/