Electrical and Structural Properties of Microcrystalline Silicon Thin Films by Hot-Wire CVD

Hot-Wire CVD법에 의한 microcrystalline silicon 박막의 저온 증착 및 전기 구조적 특성

  • 이정철 (한국에너지기술연구원 태양광발전연구팀) ;
  • 유진수 (한국에너지기술연구원 태양광발전연구팀) ;
  • 강기환 (한국에너지기술연구원 태양광발전연구팀) ;
  • 김석기 (한국에너지기술연구원 태양광발전연구팀) ;
  • 윤경훈 (한국에너지기술연구원 태양광발전연구팀) ;
  • 송진수 (한국에너지기술연구원 태양광발전연구팀) ;
  • 박이준 (한국에너지기술연구원 태양광발전연구팀)
  • Published : 2002.07.01

Abstract

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

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