초록
An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.
