RF 마그네트론 스퍼터링법으로 성장시킨 0.5 % Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$(BCZT) 박막의 특성분석

Characterization of 0.5 % Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$ Thin Films Grown by RF Magnetron Sputtering Method

We investigated the structural and electrical properties of Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$(BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/$SiO_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/$O_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 m (RMS at $500^{\circ}C$, Ar:6 scrim, $O_2$:6 sccm). We have found that annealing procedure after top electrode deposit can reduce the dissipation factor.