우수한 전기적 특성을 갖는 p+ 다이버터를 갖는 LTEIGBT의 제작에 관한 연구

Study on Fabrication of The Lateral Trench Electrode IGBT with a p+ Diverter having Excellent Electrical Characteristics

A new lateral trench electrode IGBT with p+ diverter was Proposed to suppress latch-up of LTIGBT. The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEIGBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occurred at an anode current density of 540A/$\textrm{cm}^2$. And the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. That of the conventional LTIGBT of the same size was no more than 105V. When the gate voltage is applied 12V, the forward conduction currents of the Proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90mA and 70mA, respectively, at the same breakdown voltage of 150V.