Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The influence of Si surface damage by Ar IBE on NiSi characteristics and the effect of $H_2$ anneal and TiN capping

Ar IBE에 의한 Si표면손상이 NiSi특성에 미치는 영향과 $H_2$ anneal 및 TiN capping에 의한 효과

  • 안순의 (충남대학교 전자공학과) ;
  • 지희환 (충남대학교 전자공학과) ;
  • 이헌진 (충남대학교 전자공학과) ;
  • 배미숙 (충남대학교 전자공학과) ;
  • 왕진석 (충남대학교 전자공학과) ;
  • 이희덕 (충남대학교 전자공학과)
  • Published : 2002.06.01
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Abstract

In this paper, the influence of Si surface damage on the NiSi formation has been characterized. The silicon surface is damaged using ion beam type spotter. Then, the effect of H2 anneal and TiN capping layer on the damaged has also been analyzed. The sheet resistance of NiSi formed on damaged Si increased rapidly as the damaging time increases while thermal stability of damaged NiSi was stabler than the undamaged one. In the case when H\ulcorner anneal and TiN capping layer were applied together, the characteristics of NiSi shows a little improvement of the sheet resistance.

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