MAGNETOTRANSPORT OF SEMIMETALLIC Bi THIN FILMS CROWN BY ELECTROPLATING AND SPUTTERING

  • M. H. Jeon (KIST) ;
  • Lee, K. I. (KIS) ;
  • Lee, K. H. (KIS) ;
  • J. Y. Chang (KIS) ;
  • K. H. Shin (KIS) ;
  • S. H. Han (KIS) ;
  • Lee, W. Y. (KIS) ;
  • J. G. Ha (Kwnagwoo University)
  • Published : 2002.12.01

Abstract

In recent years, semi-metallic Bismuth (Bi) has attracted significant attention due to very large magnetoresistance (MR) at room temperature originating from long carrier mean free path l and small effective carrier mass m*[1, 2]. In particular, the MR behavior and long carrier mean free path l in Bi thin films can be exploited for spintronic devices, e.g. magnetic field sensors and spin-valve transistors. In present work, we present the magnetotransport properties of the electroplated and sputtered Bi thin films in the temperature range 4-300 K. (omitted)

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