QUENCHING OF TUNNELING MAGNETORESISTANCE IN MAGNETIC TUNNEL JUNCTIONS

  • Lee, K. I. (KIST) ;
  • Lee, W. Y. (KIS) ;
  • K. H. Shin (KIS) ;
  • Lee, J. H. (Korea Universit) ;
  • K. Rhie (Korea Universit) ;
  • Lee, B. C. (Inha University)
  • Published : 2002.12.01

Abstract

The report on large tunneling magnetoresistance (TMR) at room temperature in magnetic tunnel junctions (MTJ), composed of two ferromagnetic electrodes separated by a thin insulating barrier, has ignite the intensive research both from scientific and technological points of view. A simple model proposed by Juliere has explained the observed TMR surprisingly well, where the TMR is expressed in terms of the spin polarization P of the ferromagnetic electrodes. (omitted)

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