Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Design of A CMOS RF Power Amplifier for IMT-2000 Handsets

IMT-2000 단말기용 CMOS RF 전력 증폭기의 설계

  • Lee, Dong-Woo (School of Electronical engineering and Computer Science, Kyungpook National Univ.) ;
  • Han, Seong-Hwa (School of Electronical engineering and Computer Science, Kyungpook National Univ.) ;
  • Lee, Ju-Sang (School of Electronical engineering and Computer Science, Kyungpook National Univ.) ;
  • Yu, Sang-Dae (School of Electronical engineering and Computer Science, Kyungpook National Univ.)
  • 이동우 (경북대학교 대학원 전자공학과) ;
  • 한성화 (경북대학교 대학원 전자공학과) ;
  • 이주상 (경북대학교 대학원 전자공학과) ;
  • 유상대 (경북대학교 전자전기컴퓨터학부)
  • Published : 2002.11.30
Download PDF
⟨ Previous Next ⟩

Abstract

A CMOS power amplifier for IMT-2000 is designed with 0.25-${\mu}m$ CMOS technology. This amplifier circuits consist of two cascode stages. Used cascode structure has good reverse isolation. These amplifier circuits consist of two stages which are driver stage and power amplification stage. The designed power amplifier is simulated with ADS using 0.25-${\mu}m$ CMOS library at 3.3 V power supply. Simulation results indicate that the amplifier has a PAE of 39 % and power gain of 24 dBm at 1.95 GHz.

Keywords