32'-diagonal Gated CNT Cathode

  • Lee, Chun-Gyoo (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Lee, Sang-Jo (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Lee, Sang-Jin (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Chi, Eung-Joon (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Lee, Jin-Seok (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Yun, Tae-Il (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Lee, Byung-Gon (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Han, Ho-Su (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Ahn, Sang-Hyuck (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Jung, Kyu-Won (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Kim, Hun-Yeong (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Yun, Bok-Chun (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Park, Sung-Man (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Choi, Jong-Sik (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Oh, Tae-Sik (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Kang, Sung-Kee (Technology Development 3, Corporate R&D Center, Samsung SDI) ;
  • Kim, Jong-Min (Technology Development 3, Corporate R&D Center, Samsung SDI)
  • 발행 : 2002.08.21

초록

32"-diagonal gated carbon nanotube(CNT) cathodes named under-gate cathodes for large-size display applications have been fabricated and characterized. The emission uniformity looks fine, even without the resistive layer. The emission performance has been improved by scaling down the cathode electrode dimension.

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