한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

산화막 CMP의 연마율 및 비균일도 특성

Removal Rate and Non-Uniformity Characteristics of Oxide CMP (Chemical Mechanical polishing)

  • 정소영 (대불대학교 전기공학과) ;
  • 박성우 (대불대학교 전기공학과) ;
  • 박창준 (대불대학교 전기공학과) ;
  • 이경진 (대불대학교 전기공학과) ;
  • 김기욱 (대불대학교 전기공학과) ;
  • 김철복 (대불대학교 전기공학과) ;
  • 김상용 (아남반도체 FAB 사업부) ;
  • 서용진 (대불대학교 전기공학과)
  • 발행 : 2002.05.17
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초록

As the channel length of device shrinks below $0.13{\mu}m$, CMP(chemical mechanical polishing) process got into key process for global planarization in the chip manufacturing process. The removal rate and non-uniformity of the CMP characteristics occupy an important position to CMP process control. Especially, the post-CMP thickness variation depends on the device yield as well as the stability of subsequent process. In this paper, every wafer polished two times for the improvement of oxide CMP process characteristics. Then, we discussed the removal rate and non-uniformity characteristics of post-CMP process. As a result of CMP experiment, we have obtained within-wafer non-uniformity (WIWNU) below 4 [%], and wafer-to-wafer non-uniformity (WTWNU) within 3.5 [%]. It is very good result, because the reliable non-uniformity of CMP process is within 5 [%].

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