한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

DOE(Design of Experiment)기법을 통한 CMP 공정 변수의 최적화

Optimization of CMP Process parameter using DOE(Design of Experiment) Technique

  • 이경진 (대불대학교 전기공학과) ;
  • 박성우 (대불대학교 전기공학과) ;
  • 박창준 (대불대학교 전기공학과) ;
  • 김기욱 (대불대학교 전기공학과) ;
  • 정소영 (대불대학교 전기공학과) ;
  • 김철복 (대불대학교 전기공학과) ;
  • 최운식 (대불대학교 전기공학과) ;
  • 김상용 (아남반도체, FAB 사업부) ;
  • 서용진 (대불대학교 전기공학과)
  • 발행 : 2002.05.17
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초록

The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing(CMP) process in 0.18 ${\mu}m$ semiconductor device. However it does have various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining removal rate and non-uniformity. In this paper, We studied the DOE(design of experiment) method for the optimized CMP process. Various process variations, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal process parameters.

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