한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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인산 처리 공정에 의한 ZnS:Ag,Cl 형광막의 발광 열화특성의 개선

Improvement of Luminescence Degradation of Phosphor Screen by Surface Modification with $H_{3}PO_{4}$ Solution Treatment

  • 박진민 (한국과학기술원 재료공학과) ;
  • 전덕영 (한국과학기술원 재료공학과) ;
  • 차승남 (삼성 종합기술원 디스플레이 lab) ;
  • 진용완 (삼성 종합기술원 디스플레이 lab) ;
  • 김종민 (삼성 종합기술원 디스플레이 lab)
  • 발행 : 2002.04.27
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초록

Degradation characteristics of cathodoluminescence (CL) of ZnS:Ag,Cl phosphor were investigated with measurements of CL and photoluminescence (PL). Phosphoric acid treatment was performed to phosphor particles in order to improve CL degradation of phosphor screen that occurred during panel sealing process, and we will discuss mechanisms of degradation and improvement of luminescence mainly with help of AES (auger electron spectroscopy) analysis.

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