Dishing and Erosion in Chemical Mechanical Polishing of Electroplated Copper

  • Yoon, In-Ho (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
  • Ng, Sum Huan (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
  • Hight, Robert (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
  • Zhou, Chunhong (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
  • Higgs III, C. Fred (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
  • Yao, Lily (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
  • Danyluk, Steven (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology)
  • 발행 : 2002.10.21

초록

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

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