대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Erbium 실리사이드를 이용하여 제작한 n-형 쇼트키장벽 관통트랜지스터의 전기적 특성

Characteristics of Erbium silicided n-type Schottky barrier tunnel transistors

  • Moongyu Jang (Nano-electronic device team, Electronics and Telecommunications Research Institute (ETRI)) ;
  • Kicheon Kang (Nano-electronic device team, Electronics and Telecommunications Research Institute (ETRI)) ;
  • Sunglyul Maeng (Nano-electronic device team, Electronics and Telecommunications Research Institute (ETRI)) ;
  • Wonju Cho (Nano-electronic device team, Electronics and Telecommunications Research Institute (ETRI)) ;
  • Lee, Seongjae (Nano-electronic device team, Electronics and Telecommunications Research Institute (ETRI)) ;
  • Park, Kyoungwan (Department of Nano Science & Technology, University of Seoul)
  • 발행 : 2003.07.01
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초록

The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence and the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60 nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10$^{5}$ at low drain voltage regime in drain current to gate voltage characteristics.

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