Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Novel Design for High Voltage RC-GCTs

고전압 GCT(Gate Commutated Thyristor) 소자 설계

  • 장창리 (한국전기연구원, 전력반도체그룹) ;
  • 김상철 (한국전기연구원, 전력반도체그룹) ;
  • 김은동 (한국전기연구원, 전력반도체그룹) ;
  • 김형우 (한국전기연구원, 전력반도체그룹) ;
  • 서길수 (한국전기연구원, 전력반도체그룹) ;
  • 김남균 (한국전기연구원, 전력반도체그룹)
  • Published : 2003.07.10
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Abstract

Basic design of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) by novel punch-through (PT) concept with 5,500v rated voltage is described here. A PT and NPT (non punch-through) concept for the same blocking voltage has been compared in detail. The simulation work indicates that GCT with such PT design exhibits that the forward breakdown voltage is 6,400V which is enough for supporting 5500V blocking. Additionally, the real IGCT turn-off in the mode of PNP transistor has been realized. However, the carrier extraction from N-base to gate terminal will be drastic slowly in terms of NPT structure except for the high on-state voltage drop.

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