한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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- Pages.105-108
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- 2003
CMP 슬러리 연마제의 어닐링 효과
Annealing effects of CMP slurry abrasives
- Park, Chang-Jun (DAEBUL University) ;
- Jeong, So-Young (DAEBUL University) ;
- Kim, Chul-Bok (DONGSUNG A&T) ;
-
Choi, Woon-Shik
(DAEBUL University)
;
- Seo, Yong-Jin (DAEBUL University)
- 발행 : 2003.05.30
초록
CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.
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