The properties of $TiO_2$ thin films by oxygen partial pressure

산소 분압비에 따른 $TiO_2$ 박막의 특성평가

  • Yang, Hyun-Hun (Mokpo National University, Dept. of Electrical Engineering) ;
  • Lim, Jeong-Myung (Mokpo National University, Dept. of Electrical Engineering) ;
  • Park, oung-Yun (Mokpo National University, Dept. of Electrical Engineering) ;
  • Jeong, Woon-Jo (Mokpo National University, Dept. of Electrical Engineering) ;
  • Park, Gye-Choon (Mokpo National University, Dept. of Electrical Engineering)
  • Published : 2003.05.16

Abstract

$TiO_2$ thin films were fabricated by RF magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G${\cdot}$C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; 360~370[nm), grain size; 40[nm], gap between two peak binding energy; $5.8{\pm}0.05[eV]$ ($2_{p3/2}$ peak and $2_{p1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05[eV]$, optical energy band gap; 3.4[eV].

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